ISO 17560:2014

Published (Edition 2, 2014)

This publication was last reviewed and confirmed in 2020. Therefore this version remains current.

ISO 17560:2014

CHF 63

Convert Swiss francs (CHF) to your currency

Abstract

ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 10¹⁶ atoms/cm³ and 1 × 10²⁰ atoms/cm³, and to crater depths of 50 nm or deeper.

General information

Status
: Published

Publication date
: 2014-09

Stage
: International Standard confirmed [90.93]
Edition
: 2

Number of pages
: 10
Technical Committee :
ISO/TC 201/SC 6

ICS :
71.040.40
RSS updates